半导体薄膜与纳米材料研究组

潘新花 博士后


2010.7至今:浙江大学硅材料国家重点实验室 博士后

2005.9–2010.6    浙江大学材料科学与工程学系 博士

2007.9–2008.9    美国密歇根大学材料科学与工程系  国家公派联合培养

2001.9–2005.7    吉林大学材料科学与工程学院 学士

      主要从事ZnO半导体材料及相关器件的科研工作,以第一作者身份发表SCI论文9篇,其中APL、JAP重要国际期刊论文4篇;申请国家发明专利5项,已授权2项。2007年9月~2008年9月,获国家留学基金委资助,以国家公派联合培养博士研究生身份访问美国密歇根大学。

期刊论文:

  1. X. H. Pan, W. Guo, Z. Z. Ye, B. Liu, Y. Che, C. T. Nelson, Y. Zhang, W. Tian, D. G. Schlom, X. Q. Pan, Epitaxial Zn1-xMgxO films grown on (111) Si by pulsed laser deposition, Chem. Phys. Lett.2010, 485 (4-6), 363-366.

  2. X. H. Pan, W. Guo, W. Tian, H. P. He, Z. Z. Ye, X. Q. Gu, D. G. Schlom, X. Q. Pan, Optical properties of ZnO/Zn0.9Mg0.1O multiple quantum wells grown on (111) Si using buffer assisted pulsed-laser deposition, J. Appl. Phys.2010, 107 (3), 033102.

  3. X. H. Pan, W. Guo, Z. Z. Ye, B. Liu, Y. Che, W. Tian, D. G. Schlom, X. Q. Pan, Temperature-dependent Hall and photoluminescence evidence for conduction-band edge shift induced by alloying ZnO with magnesium, Appl. Phys. Lett.2009, 95 (15), 152105.

  4. X. H. Pan, W. Guo, Z. Z. Ye, B. Liu, Y. Che, H. P. He, X. Q. Pan, Optical properties of antimony-doped p-type ZnO films fabricated by pulsed laser deposition, J. Appl. Phys. 2009, 105 (11), 113516.

  5. X. H. Pan, J. Jiang, Y. J. Zeng, H. P. He, L. P. Zhu, Z. Z. Ye, B. H. Zhao, X. Q. Pan, Electrical and optical properties of phosphorus-doped p-type ZnO films grown by metalorganic chemical vapor deposition, J. Appl. Phys. 2008, 103 (2), 023708.

  6. X. H. Pan, Z. Z. Ye, J. Y. Huang, Y. J. Zeng, H. P. He, X. Q. Gu, L. P. Zhu, B. H. Zhao, p-Type behavior in Li-doped Zn0.9Mg0.1O thin films, J. Cryst. Growth 2008, 310 (6), 1029-1033.

  7. X. H. Pan, Z. Z. Ye, Y. J. Zeng, X. Q. Gu, J. S. Li, L. P. Zhu, B. H. Zhao, Y. Che, X. Q. Pan, Preparation of p-type ZnMgO thin films by Sb doping method, J. Phys. D: Appl. Phys.2007, 40 (14), 4241-4244.

  8. X. H. Pan, Z. Z. Ye, J. S. Li, X. Q. Gu, Y. J. Zeng, H. P. He, L. P. Zhu, Y. Che, Fabrication of Sb-doped p-type ZnO thin films by pulsed laser deposition, Appl. Surf. Sci.2007, 253 (11), 5067-5069.

  9. X. H. Pan, Z. Z. Ye, J. S. Li, Y. J. Zeng, X. Q. Gu, L. P. Zhu, B. H. Zhao, Y. Che, Fabrication of p-type ZnMgO films via pulsed laser deposition method by using Li as dopant source, Appl. Surf. Sci. 2007, 253 (14), 6060-6062.

  10. 潘新花,叶志镇,朱丽萍,顾修全,何海平,PLD法制备锑掺杂p型ZnO薄膜,半导体学报,2007,28,156-158.

授权专利:
[1]叶志镇、潘新花,Sb掺杂的p型ZnO晶体薄膜的制备方法,发明专利(中国国家知识产权局),专利号:ZL 200710066967.X,授权日:2008年11月12日
[2]叶志镇、潘新花、林均铭、朱丽萍、赵炳辉,Sb掺杂生长p型Zn1-xMgxO晶体薄膜的方法,发明专利(中国国家知识产权局),专利号:ZL 200710070938.0,授权日:2009年9月9日
学术活动:
[1] X. H. Pan, P. Ding, Z. Z. Ye, H. P. He, X. Q. Pan, D. G. Schlom, Optical properties of ZnO/Zn0.9Mg0.1O multiple quantum wells grown on (111) Si substrates, The 6th international workshop on ZnO and related materials, Changchun, China, Aug. 2010.
[2]Z. Z. Ye, X. H. Pan, J. Y. Huang, Y. Z. Zhang, p-type thin films and light-emitting junctions using Na-doped Zn1-xMgxO, The 8th international symposium on semiconductor light emitting devices, Peking University, Beijing, China, May 2010.
[3]X. H. Pan, Z. Z. Ye, W. Guo, X. Q. Pan, Epitaxial Zn1-xMgxO films grown on (111) Si by pulsed laser deposition, The Asia-Pacific Workshop on Widegap Semiconductors, Zhangjiajie, China, May 2009.
[4]潘新花,叶志镇,潘晓晴,何海平,脉冲激光沉积法在(111)Si衬底上外延生长Zn0.9Mg0.1O薄膜,第十五届全国化合物半导体材料、微波器件和光电器件学术会议,广州,2008年11月。
[5]叶志镇,潘新花,ZnO薄膜p型掺杂及ZnO-LED室温电致发光,第15届全国化合物半导体材料、微波器件和光电器件学术会议,广州,2008年11月。
[6]潘新花,叶志镇,潘晓晴,何海平,脉冲激光沉积法在(111)Si衬底上外延生长Zn0.9Mg0.1O薄膜,第11届全国固体薄膜学术会议,杭州,2008年10月。
[7]X. H. Pan, W. Guo, X. Q. Pan, Z. Z. Ye, H. P. He, B. Liu, Y. Che, Experiment evidence for conduction-band edge in ZnO shifting to a higher energy by Mg doping, The 5th international workshop on ZnO and related materials, Ypsilanti, Michigan, USA, Sep. 2008.
[8]X. H. Pan, W. Guo, X. Q. Pan, Z. Z. Ye, B. Liu, Y. Che, Epitaxial Zn1-xMgxO films on Si (111) grown by pulsed laser deposition, The 5th international workshop on ZnO and related materials, Ypsilanti, Michigan, USA, Sep. 2008.
[9]潘新花,叶志镇,朱丽萍,顾修全,何海平,PLD法制备锑掺杂p型ZnO薄膜,第14届全国化合物半导体材料、微波器件和光电器件学术会议,北海,2006年11月。

联系方式:
电话:+86-571-87952187

电子邮箱:panxinhua@zju.edu.cn